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BU323 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BU323
功能描述  isc Silicon Darlington NPN Power Transistor
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BU323 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon Darlington NPN Power Transistor
BU323
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 10mH
350
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 60mA
B
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6 A; IB= 120mA
1.7
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 10 A; IB= 300mA
B
2.7
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 6 A; IB= 120mA
2.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10 A; IB= 300mA
B
3.0
V
VBE(on)
Base-Emitter On Voltage
IC= 10A ; VCE= 6V
2.5
V
ICER
Collector Cutoff Current
VCER= RatedVCER;RBE= 100Ω
1.0
mA
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
40
mA
hFE-1
DC Current Gain
IC= 3A; VCE= 6V
300
hFE-2
DC Current Gain
IC= 6A; VCE= 6V
150
2000
hFE-3
DC Current Gain
IC= 10A; VCE= 6V
50
VECF
C-E Diode Forward Voltage
IF= 10A
3.5
V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 100kHz
165
pF
Switching Times
ts
Storage Time
15
μs
tf
Fall Time
VCC= 12V; IC= 6A,
IB1= -IB2= 0.3A
15
μs
isc Website:www.iscsemi.cn


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