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BU323 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU323 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU323 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 10mH 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA 1.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA B 2.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6 A; IB= 120mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 300mA B 3.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 6V 2.5 V ICER Collector Cutoff Current VCER= RatedVCER;RBE= 100Ω 1.0 mA ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 40 mA hFE-1 DC Current Gain IC= 3A; VCE= 6V 300 hFE-2 DC Current Gain IC= 6A; VCE= 6V 150 2000 hFE-3 DC Current Gain IC= 10A; VCE= 6V 50 VECF C-E Diode Forward Voltage IF= 10A 3.5 V COB Output Capacitance IE= 0; VCB= 10V; f= 100kHz 165 pF Switching Times ts Storage Time 15 μs tf Fall Time VCC= 12V; IC= 6A, IB1= -IB2= 0.3A 15 μs isc Website:www.iscsemi.cn |
类似零件编号 - BU323 |
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类似说明 - BU323 |
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