BDX62 datasheet(2/2 Pages) ISC

部件名	BDX62

功能描述	isc Silicon PNP Darlington Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDX62/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDX62

-60

BDX62A

-80

BDX62B

-100

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDX62C

IC= -100mA ;IB=0

-120

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -12mA

B

-2

V

VBE(on)

Base-Emitter On Voltage

IC= -3A ; VCE= -3V

-2.5

V

ICEO

Collector Cutoff Current

VCE=

1/

2VCEO; IB= 0

-0.2

mA

ICBO

Collector Cutoff Current

VCB= VCBOmax;IE= 0

-0.2

mA

BDX62

VCB= -40V;IE= 0;TJ= 200℃

BDX62A

VCB= -50V;IE= 0;TJ= 200℃

BDX62B

VCB= -60V;IE= 0;TJ= 200℃

ICBO

Collector Cutoff Current

BDX62C

VCB= -70V;IE= 0;TJ= 200℃

-2

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-5

mA

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -3V

1500

hFE-2

DC Current Gain

IC= -3A ; VCE= -3V

1000

hFE-3

DC Current Gain

IC= -8A ; VCE= -3V

750

COB

Output Capacitance

IE= 0 ; VCB= -10V; ftest= 1MHz

100

pF

Switching times

ton

Turn-on Time

0.5

μs

toff

Turn-off Time

IC= -3A; IB1= -IB2= -12mA

2.5

μs

isc Website：www.iscsemi.cn

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