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2SD1046 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1046 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1046 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE= ∞ 120 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 2.0 V VBE Base-emitter on voltage IC=1A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 200 hFE-2 DC current gain IC=5A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 15 MHz COB Collector output capacitance f=1MHz;VCB=10V 160 pF Switching times ton Turn-on time 0.22 μ s tstg Storage time 6.66 μ s tf Fall time IC=1.0A; IB1=-IB2=0.1A VCC=20V;RL=20Ω 1.02 μ s hFE-1 Classifications D E 60-120 100-200 |
类似零件编号 - 2SD1046 |
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类似说明 - 2SD1046 |
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