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2SD993 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD993 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD993 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 35mH 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 10 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 1.3 V ICES Collector Cutoff Current VCB= 1500V; VEB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 44 133 mA hFE DC Current Gain IC= 2A; VCE= 5V 3 15 isc Website:www.iscsemi.cn 2 |
类似零件编号 - 2SD993 |
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类似说明 - 2SD993 |
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