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FM28V100-TGTR 数据表(PDF) 1 Page - Ramtron International Corporation |
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FM28V100-TGTR 数据表(HTML) 1 Page - Ramtron International Corporation |
1 / 13 page Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.2 http://www.ramtron.com May 2010 Page 1 of 13 FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion (1014) Read/Writes • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules • No battery concerns • Monolithic reliability • True surface mount solution, no rework steps • Superior for moisture, shock, and vibration SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA (typ) • Active Current 7 mA (typ) Industry Standard Configurations • Industrial Temperature -40 ° C to +85° C • 32-pin “Green”/RoHS Package General Description The FM28V100 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory. In-system operation of the FM28V100 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by toggling a chip enable pin or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V100 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. Device specifications are guaranteed over the industrial temperature range -40°C to +85°C. Pin Configuration * Reserved for A17 on 2Mb Ordering Information FM28V100-TG 32-pin “Green”/RoHS TSOP FM28V100-TGTR 32-pin “Green”/RoHS TSOP, Tape & Reel TSOP-I 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A11 A9 A8 A13 WE CE2 A15 VDD NC* A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 |
类似零件编号 - FM28V100-TGTR |
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类似说明 - FM28V100-TGTR |
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