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1N5417 数据表(PDF) 1 Page - Vishay Siliconix |
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1N5417 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 86097 For technical questions within your region, please contact one of the following: www.vishay.com Rev. 1.4, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Fast Avalanche Sinterglass Diode 1N5417, 1N5418 Vishay Semiconductors MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Low forward voltage drop • High pulse current capability • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Fast rectification diode 949588 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5417 VR = 200 V; IFAV = 3 A SOD-64 1N5418 VR = 400 V; IFAV = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage = repetitive peak reverse voltage See electrical characteristics 1N5417 VR = VRRM 200 V 1N5418 VR = VRRM 400 V Peak forward surge current tp = 10 ms, half sine wave IFSM 100 A Average forward current l = 10 mm, TL = 25 °C IFAV 3A Non repetitive reverse avalanche energy I(BR)R = 1 A ER 20 mJ Junction and storage temperature range Tj = Tstg - 55 to + 175 °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W |
类似零件编号 - 1N5417 |
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类似说明 - 1N5417 |
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