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DB15/25-12 Datasheet(数据表) 2 Page - Diotec Semiconductor

部件型号  DB15/25-12
说明  Three-Phase Si-Bridge-Rectifiers
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
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DB15/25-12 Datasheet(HTML) 2 Page - Diotec Semiconductor

   
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DB15/25-005 ... DB15/25-16
Maximum ratings
Grenzwerte
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
100 A 1)
Peak forward surge current 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
IFSM
350 A
Peak forward surge current 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
385 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
630 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Characteristics
Kennwerte
Max. current with cooling fin 300 cm²
Dauergrenzstrom mit Kühlblech 300 cm2
TA = 50°C
R-load
C-load
IFAV
IFAV
25 A
25 A
Forward voltage – Durchlass-Spannung
Tj = 25°C
IF = 12.5 A
VF
< 1.05 V 2)
Leakage current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 10 µA
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
VISO
> 2500 V
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 2.4 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
10-32 UNF
M5
18 ± 10% lb.in.
2 ± 10% Nm
1
Valid, if the temperature of the case is kept to TC = 120°C – Gültig, wenn die Gehäusetemperatur auf TC = 120°C gehalten wird
2
Valid for one branch – Gültig für einen Brückenzweig
2
http://www.diotec.com/
© Diotec Semiconductor AG
Rated forward current versus ambient temperature )
Zul. Richtstrom in Abh. von der Umgebungstemp. )
1
1
I
FAV
[%]
120
100
80
60
40
20
0
[°C]
T
A
150
100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
10
10
1
10
3
2
-1
[A]
I
F
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
T = 25°C
j
T = 125°C
j
350a-(12.5a-1,05v)




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