IRLHS6276TRPBF datasheet(5/9 Pages) IRF

部件名	IRLHS6276TRPBF

功能描述	HEXFET Power MOSFET

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRLHS6276PbF

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Fig 12. On-Resistance vs. Gate Voltage

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 16.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

0

2

4

6

8

10

12

VGS, Gate -to -Source Voltage (V)

0

20

40

60

80

100

ID = 3.4A

TJ = 25°C

TJ = 125°C

0

5

10

15

20

25

30

ID, Drain Current (A)

0

50

100

150

200

250

VGS = 2.5V

VGS = 4.5V

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

10

20

30

40

50

60

ID

TOP

0.89A

1.8A

BOTTOM 3.4A

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Time (sec)

0

200

400

600

800

1000

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• LowLeakageInductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Fig 13. Typical On-Resistance vs. Drain Current

Fig 15. Typical Power vs. Time

类似零件编号 - IRLHS6276TRPBF

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IRLHS6276TRPBF 数据表(PDF) 5 Page - International Rectifier

IRLHS6276TRPBF 数据表(HTML) 5 Page - International Rectifier

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IRLHS6276TRPBF 数据表(PDF) 5 Page - International Rectifier

IRLHS6276TRPBF 数据表(HTML) 5 Page - International Rectifier

类似零件编号 - IRLHS6276TRPBF

类似说明 - IRLHS6276TRPBF

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