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MJ11033 数据表(PDF) 1 Page - ON Semiconductor |
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MJ11033 数据表(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 6 1 Publication Order Number: MJ11028/D MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • Junction Temperature to +200_C • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage MJ11028/29 MJ11030 MJ11032/33 VCEO 60 90 120 Vdc Collector−Base Voltage MJ11028/29 MJ11030 MJ11032/33 VCBO 60 90 120 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous − Peak (Note 1) IC 50 100 Adc Base Current − Continuous IB 2.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C @ TC = 100_C PD 300 1.71 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Lead Temperature for Soldering Purposes for v 10 seconds TL 275 _C Thermal Resistance, Junction−to−Case RqJC 0.58 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−204 (TO−3) CASE 197A STYLE 1 50 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 60 − 120 VOLTS 300 WATTS MARKING DIAGRAM MJ110xx = Device Code xx = 28, 29, 30, 32, 33 G= Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin http://onsemi.com MJ110xxG AYYWW MEX See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ORDERING INFORMATION COLLECTOR CASE BASE 1 EMITTER 2 COLLECTOR CASE BASE 1 EMITTER 2 NPN PNP MJ11028 MJ11029 MJ11030 MJ11032 MJ11033 2 1 |
类似零件编号 - MJ11033 |
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类似说明 - MJ11033 |
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