MJ14002 datasheet(3/5 Pages) ONSEMI

部件名	MJ14002

功能描述	High?묬urrent Complementary Silicon Power Transistors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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3 / 5 page

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)

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3

300

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.7 1.0

2.0

3.0

20

200

30

VCE = 3.0 V

100

7.0

5.0

10

3.0

5.0

10

20

70

50

Figure 4. DC Current Gain

2.8

0.1

IB, BASE CURRENT (AMPS)

1.0

10

TJ = 25°C

5.0

3.0

2.0

0.5

2.0

1.2

0.8

0.4

7.0

30

50

70

0

1.6

2.4

7.0

0.7

0.3

0.2

300

Figure 5. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.7 1.0

2.0

3.0

20

200

30

100

7.0

5.0

10

3.0

5.0

10

20

70

50

Figure 6. Collector Saturation Region

2.8

0.1

IB, BASE CURRENT (AMPS)

1.0

10

5.0

3.0

2.0

0.5

2.0

1.2

0.8

0.4

7.0

30

50 70

0

1.6

2.4

7.0

0.7

0.3

0.2

IC = 60 A

TJ = 25°C

MJ14002 (NPN)

MJ14001, MJ14003 (PNP)

2.8

0.7

IC, COLLECTOR CURRENT (AMPS)

10

TJ = 25°C

50

30

20

5.0

2.0

1.2

0.8

0.4

0

1.6

2.4

70

7.0

2.0

1.0

Figure 7. “On” Voltages

VBE(sat) @ IC/IB = 10

3.0

VBE(on) @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

2.8

0.7

IC, COLLECTOR CURRENT (AMPS)

10

TJ = 25°C

50

30

20

5.0

2.0

1.2

0.8

0.4

0

1.6

2.4

70

7.0

2.0

1.0

Figure 8. “On” Voltages

3.0

TJ = −55°C

TJ = 25°C

TJ = 150°C

VCE = 3.0 V

TJ = −55°C

TJ = 25°C

TJ = 150°C

IC = 25 A

IC = 10 A

IC = 60 A

IC = 25 A

IC = 10 A

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

TYPICAL ELECTRICAL CHARACTERISTICS

类似零件编号 - MJ14002

制造商	部件名	数据表	功能描述
Motorola, Inc	MJ14002	241Kb / 6P	60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS
ON Semiconductor	MJ14002	241Kb / 6P	COMPLEMENTARY SILICON POWER TRANSITORS 1995 REV 2
Seme LAB	MJ14002	10Kb / 1P	MJ14002
Inchange Semiconductor ...	MJ14002	291Kb / 2P	isc Silicon NPN Darlington Power Transistor
New Jersey Semi-Conduct...	MJ14002	121Kb / 2P	High-Current Complementary Silicon Power Transistors

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类似说明 - MJ14002

制造商	部件名	数据表	功能描述
ON Semiconductor	2N5684	151Kb / 7P	High?묬urrent Complementary Silicon Power Transistors March, 2006 ??Rev. 11
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STMicroelectronics	TIP35C	47Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
New Jersey Semi-Conduct...	2N3055A	309Kb / 3P	COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS
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STMicroelectronics	TIP35CW	104Kb / 7P	Complementary Silicon High Power Transistors
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STMicroelectronics	2N5884	68Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS June 1997