MJ11015G datasheet(1/4 Pages) ONSEMI

部件名	MJ11015G

功能描述	High-Current Complementary Silicon Transistors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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September, 2008 − Rev. 5

1

Publication Order Number:

MJ11012/D

MJ11015 (PNP); MJ11012,

MJ11016 (NPN)

MJ11016 is a Preferred Device

High-Current

Complementary Silicon

Transistors

. . . for use as output devices in complementary general purpose

amplifier applications.

• High DC Current Gain −

hFE = 1000 (Min) @ IC − 20 Adc

• Monolithic Construction with Built−in Base Emitter Shunt

Resistor

• Junction Temperature to +200_C

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJ11012

MJ11015/6

VCEO

60

120

Vdc

Collector−Base Voltage

MJ11012

MJ11015/6

VCB

60

120

Vdc

Emitter−Base Voltage

VEB

5

Vdc

Collector Current

IC

30

Adc

Base Current

IB

1

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C @ TC = 100°C

PD

200

1.15

W

W/°C

Operating Storage Junction

Temperature Range

TJ, Tstg

−55 to + 200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.87

°C/W

Maximum Lead Temperature for Sol-

dering Purposes for ≤ 10 Seconds

TL

275

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

30 AMPERE DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 − 120 VOLTS, 200 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING

DIAGRAM

MJ1101x = Device Code

x = 2, 5 or 6

G= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

MJ1101xG

AYYWW

MEX

Device

Package

Shipping

ORDERING INFORMATION

MJ11012

TO−3

100 Units/Tray

MJ11012G

TO−3

(Pb−Free)

100 Units/Tray

COLLECTOR

CASE

BASE

1

EMITTER 2

COLLECTOR

CASE

BASE

1

EMITTER 2

NPN

PNP

MJ11016

MJ11015

MJ11012

Preferred devices are recommended choices for future use

and best overall value.

MJ11015

TO−3

100 Units/Tray

MJ11015G

TO−3

(Pb−Free)

100 Units/Tray

MJ11016

TO−3

100 Units/Tray

MJ11016G

TO−3

(Pb−Free)

100 Units/Tray

2

1

类似零件编号 - MJ11015G

制造商	部件名	数据表	功能描述
Mospec Semiconductor	MJ11015	140Kb / 3P	POWER TRANSISTORS(30A,60-120V,200W)
Motorola, Inc	MJ11015	157Kb / 4P	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
ON Semiconductor	MJ11015	157Kb / 4P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 1
Wing Shing Computer Com...	MJ11015	21Kb / 1P	PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
Central Semiconductor C...	MJ11015	54Kb / 1P	Power Transistors

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类似说明 - MJ11015G

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