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BF421ZL1G 数据表(PDF) 2 Page - ON Semiconductor |
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BF421ZL1G 数据表(HTML) 2 Page - ON Semiconductor |
2 / 4 page BF421, BF423 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) BF421 BF423 V(BR)CEO −300 −250 − − Vdc Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) BF421 BF423 V(BR)CBO −300 −250 − − Vdc Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) BF421 BF423 V(BR)EBO −5.0 −5.0 − − Vdc Collector Cutoff Current (VCB = −200 Vdc, IE = 0) BF421 BF423 ICBO − − −0.01 − mAdc Emitter Cutoff Current (VEB = −5.0 Vdc, IC = 0) BF421 BF423 IEBO − − −100 − nAdc ON CHARACTERISTICS DC Current Gain (IC = −25 mA, VCE = −20 Vdc) BF421 BF423 hFE 50 50 − − − Collector−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base −Emitter Saturation Voltage (IC = −20 mA, IB = −2.0 mA) VBE(sat) − −2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 20 MHz) fT 60 − MHz Common Emitter Feedback Capacitance (VCB = −30 Vdc, IE = 0, f = 1.0 MHz) Cre − 2.8 pF 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Figure 1. DC Current Gain IC, COLLECTOR CURRENT (mA) 300 0.1 1.0 10 250 200 150 0 TJ = +125°C 25 °C -55 °C VCE = 10 Vdc 100 50 100 |
类似零件编号 - BF421ZL1G |
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类似说明 - BF421ZL1G |
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