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STD1766 数据表(PDF) 1 Page - KODENSHI_AUK CORP. |
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STD1766 数据表(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 5 page KSD-T5B004-003 1 STD1766 NPN Silicon Transistor SOT-89 PIN Connection ㅇ Descriptions • Medium power amplifier Features • PC(Collector power dissipation)=2W (Ceramic substrate of 250 ㎟×0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188 • “Green” device and RoHS compliant device • Available in full lead (Pb)-free device Ordering Information Type NO. Marking Package Code STD1766 B2 □ YWW SOT-89 B2: DEVICE CODE, □ : hFE rank, YWW(Y : Year code, WW : Weekly code) Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 32 V Emitter-Base voltage VEBO 5 V IC 2 A(DC) Collector current ICP* 4 A(Pulse) PC 0.5 Collector power dissipation PC** 1 W Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Characteristic Symbol Typ. Max Unit Rth(J-A) - 250.0 Thermal resistance Junction-ambient Rth(J-A) ** - 125.0 ℃ /W * : Single pulse, tp= 300 ㎲ ** : When mounted on ceramic substrate(250 ㎟×0.8t) |
类似零件编号 - STD1766 |
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类似说明 - STD1766 |
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