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L6230PD 数据表(PDF) 11 Page - STMicroelectronics |
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L6230PD 数据表(HTML) 11 Page - STMicroelectronics |
11 / 24 page L6230 Circuit description Doc ID 18094 Rev 2 11/24 5 Circuit description 5.1 Power stages and charge pump The L6230 integrates a three-phase bridge, which consists of 6 power MOSFETs connected as shown on the block diagram (see Figure 1), each power MOS has an RDS(ON) = 0.73 Ω (typical value @ 25 °C) with intrinsic fast freewheeling diode. Cross conduction protection is implemented by using a dead time (tDT = 1 µs typical value) set by internal timing circuit between the turn off and turn on of two power MOSFETs in one leg of a bridge. Pins VSA and VSB must be connected together to the supply voltage (VS). Using N-channel power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained through an internal oscillator and few external components to realize a charge pump circuit as shown in Figure 6. The oscillator output (pin VCP) is a square wave at 600 kHz (typically) with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table 7. Figure 6. Charge pump circuit Table 7. Charge pump external component values Component Value CBOOT 220 nF CP 10 nF D1 1N4148 D2 1N4148 D2 CBOOT D1 CP VS VSA VCP VBOOT VSB |
类似零件编号 - L6230PD |
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类似说明 - L6230PD |
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