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SE98A 数据表(PDF) 28 Page - NXP Semiconductors |
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SE98A 数据表(HTML) 28 Page - NXP Semiconductors |
28 / 43 page SE98A_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 25 November 2009 28 of 43 NXP Semiconductors SE98A DDR memory module temp sensor, 1.7 V to 3.6 V 9.1 SE98A in memory module application Figure 15 shows the SE98A being placed in the memory module application with the SPD. The SE98A is centered in the memory module to provide the function to monitor the temperature of the DRAM. In the event of overheat, the SE98A triggers the EVENT output and the memory controller can throttle the memory bus to slow the DRAM, or the CPU can increase the refresh rate for the DRAM. The memory controller can also read the SE98A and watch the DRAM thermal behavior. 9.2 Layout consideration The SE98A does not require any additional components other than the host controller to measure temperature. A 0.1 μF bypass capacitor between the V DD and VSS pins is located as close as possible to the power and ground pins for noise protection. 9.3 Thermal considerations In general, self-heating is the result of power consumption and not a concern, especially with the SE98A, which consumes very low power. In the event the SDA and EVENT pins are heavily loaded with small pull-up resistor values, self-heating affects temperature accuracy by approximately 0.5 °C. Equation 1 is the formula to calculate the effect of self-heating: (1) where: ΔT = T j − Tamb Tj = junction temperature Tamb = ambient temperature Rth(j-a) = package thermal resistance VDD = supply voltage IDD(AV) = average supply current VOL(SDA) = LOW-level output voltage on pin SDA VOL(EVENT) = LOW-level output voltage on pin EVENT Fig 15. System application 002aad760 SE98A EVENT DIMM DRAM DRAM DRAM DRAM MEMORY CONTROLLER SMBus CPU SPD SDA SCL ΔTR th j-a () V DD I DD AV () × () V OL SDA () I OL k sin () SDA () × () V OL EVENT () I OL k sin ()EVENT × () ++ [ ] × = |
类似零件编号 - SE98A |
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类似说明 - SE98A |
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