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KMB054N45DA 数据表(PDF) 2 Page - KEC(Korea Electronics) |
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KMB054N45DA 数据表(HTML) 2 Page - KEC(Korea Electronics) |
2 / 5 page 2008. 8. 7 2/5 KMB054N45DA Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 45 - - V Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.7 3 V Drain-Source ON Resistance RDS(ON)* VGS=10V, ID=14A - 6.5 8.5 m VGS=4.5V, ID=11A - 8.8 11 VGS=10V, ID=14A, Tj=125 - 10.4 14 Forward Transconductance gfs* VDS=10V, ID=20A - 58 - S Dynamic Input Capacitance Ciss VDS=20V, f=1MHz, VGS=0V - 1280 - pF Ouput Capacitance Coss - 250 - Reverse Transfer Capacitance Crss - 125 - Total Gate Charge VGS=10V Qg* VDS=20V, VGS=10V, ID=14A - 25.4 - nC VGS=5V Qg* - 13.8 - Gate-Source Charge Qgs* - 5.7 - Gate-Drain Charge Qgd* - 5.4 - Turn-On Delay Time td(on)* VDD=20V, VGS=10V ID=1A, RG=6 - 19 - ns Turn-On Rise Time tr* - 16 - Turn-Off Delay Time td(off)* - 60 - Turn-Off Fall Time tf* - 14 - Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF* VGS=0V, IS=14A - 0.8 1.2 V Note>* Pulse Test : Pulse width <300 , Duty cycle < 2% |
类似零件编号 - KMB054N45DA |
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类似说明 - KMB054N45DA |
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