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KF10N60F 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KF10N60F 数据表(HTML) 1 Page - KEC(Korea Electronics) |
1 / 7 page 2010. 8. 16 1/7 SEMICONDUCTOR TECHNICAL DATA KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ・VDSS=600V, ID=10A ・Drain-Source ON Resistance : RDS(ON)(Max)=0.73Ω @VGS=10V ・Qg(typ.)= 29.5nC MAXIMUM RATING (Tc=25 ℃) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT KF10N60P KF10N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 10 10* A @TC=100℃ 6 6* Pulsed (Note1) IDP 25 25* Single Pulsed Avalanche Energy (Note 2) EAS 400 mJ Repetitive Avalanche Energy (Note 1) EAR 16.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 ℃ PD 178 46 W Derate above 25 ℃ 1.43 0.37 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.7 2.7 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 ℃/W G D S PIN CONNECTION DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 MAX 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C H NN Q D Q P P 1. GATE 2. DRAIN 3. SOURCE 12 3 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) A A B C C D D E E F G H H 1.47 MAX 1.47 MAX J K L M L N NN O Q R R 12 3 M DIM MILLIMETERS 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ KF10N60P (KF10N60P, KF10N60F) KF10N60F |
类似零件编号 - KF10N60F |
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类似说明 - KF10N60F |
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