2SJ477-01MR datasheet(1/4 Pages) FUJI

部件名	2SJ477-01MR

功能描述	P-CHANNEL SILICON POWER MOSFET

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制造商	FUJI [Fuji Electric]

网页	http://www.fujielectric.co.jp/eng/fdt/scd

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1

Item

Symbol

Rating

Unit

Drain-source voltage

VDS

-60

Continuous drain current

ID

±25

Pulsed drain current

ID(puls]

±100

Gate-source voltage

VGS

±20

Maximum avalanche energy *1

EAV

519.8

Maximum power dissipation(Tc=25°C)

PD

40

Operating and storage

Tch

+150

temperature range

Tstg

2SJ477-01MR FUJIPOWERMOSFET

P-CHANNEL SILICON POWER MOSFET

Equivalent circuit schematic

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

V

A

V

mJ

W

°C

-55 to +150

FAP-III SERIES

Electrical characteristics (Tc =25°C unless otherwise specified)

Thermal characteristics

Item

Symbol

Zero gate voltage drain current

IDSS

Min.

Typ.

Max.

Units

V

μA

mA

nA

m

Ω

m

Ω

S

pF

ns

A

V

ns

μC

Min.

Typ.

Max.

Units

Thermal resistance

Rth(ch-c)

Rth(ch-a)

3.125

62.5

°C/W

Symbol

BVDSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IAV

VSD

trr

Qrr

Test Conditions

ID=1mA

VGS=0V

ID=1mA

VDS=VGS

VDS= -60V

Tch=25°C

VGS=0V

Tch=125°C

VGS=±20V VDS=0V

ID= -12.5A

VGS= -4V

VGS= -10V

ID=12.5A VDS= -25V

VDS= -25V

VGS=0V

f=1MHz

VCC= -30V RG=10

Ω

ID= -25A

VGS= -10V

L=100μH

Tch=25°C

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

-di/dt=100A/

μs Tch=25°C

-60

-1.0

-1.5

-2.5

-10

-500

-0.2

-1.0

10

100

80

110

45

60

7.5

15.0

2000

3000

700

1050

450

680

15

25

80

120

190

290

90

140

-25

-2

-3

160

0.9

Gate(G)

Source(S)

Drain(D)

Outline Drawings

Features

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High forward Transconductance

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

*1 L=1.11mH, Vcc= -24V

www.fujielectric.co.jp/fdt/scd/

TO-220F

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