BCX19_99 datasheet(1/1 Pages) KEC

部件名	BCX19

功能描述	EPITAXIAL PLANAR NPN TRANSISTOR

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制造商	KEC [KEC(Korea Electronics)]

网页	http://www.keccorp.com

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1999. 11. 30

1/1

SEMICONDUCTOR

TECHNICAL DATA

BCX19

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURE

Super Mini Packaged Transistors for Hybrid Circuits.

MAXIMUM RATING (Ta=25

)

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10mA, IB=0

45

-

V

Collector-Emitter Breakdown Voltage

V(BR)CES

IC=10 A, VBE=0

50

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

5.0

-

V

Collector Cut-off Current

ICBO

VCB=20V, IE=0

-

100

nA

Ta=150

, VCB=20V, IE=0

-

5.0

A

DC Current Gain

hFE

VCE=1V, IC=100mA

100

-

600

VCE=1V, IC=300mA

70

-

VCE=1V, IC=500mA

40

-

Base-Emitter Voltage

VBE(ON)

VCE=1V, IC=500mA

-

1.2

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=50mA

-

0.62

V

Transition Frequency

fT

IC=10mA, VCE=5V, f=100MHz

-

200

-

MHz

Collector Output Capacitance

Cob

VCB=10V, f=1MHz

-

6.0

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCEO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

500

mA

Emitter Current

IE

-500

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-65

150

Type Name

Marking

Lot No.

U1

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