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SS8050T 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SS8050T 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page Any changing of specification will not be informed individual SS8050T NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 0 0.4 0.8 1.2 1.6 2.0 0.1 0.2 0.3 0.4 0.5 IB = 3.0mA IB = 2.5mA IB = 2.0mA IB = 1.5mA IB = 1.0mA IB = 0.5mA VCE[V], COLLECTOR-EMITTER VOLTAGE 0.1 1 10 100 1000 1 10 100 1000 VCE = 1V IC[mA], COLLECTOR CURRENT 0.1 1 10 100 1000 10 100 1000 10000 IC = 10 IB VCE(sat) VBE(sat) IC[mA], COLLECTOR CURRENT 0.00.2 0.40.60.81.01.2 0.1 1 10 100 VCE = 1V VBE[V], BASE-EMITTER VOLTAGE 110 100 1 10 100 1000 IE = 0 f = 1MHz VCB [V], COLLECTOR-BASE VOLTAGE 1 10 100 400 1 10 100 1000 VCE = 10V IC[mA], COLLECTOR CURRENT 01-Jun-2002 Rev. A Page 2 of 2 |
类似零件编号 - SS8050T |
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类似说明 - SS8050T |
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