PZT2222A datasheet(3/4 Pages) SECOS

部件名	PZT2222A

功能描述	General Purpose Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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3 / 4 page

Elektronische Bauelemente

PZT2222A

NPN Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Figure 5. Turn–On Time

IC, COLLECTOR CURRENT (mA)

70

100

200

50

10

20

70

5.0

100

5.0 7.0

30

50

200

10

30

7.0

20

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300

500

5.0

7.0

10

20

30

50

70

100

200

300

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

10

20

70 100

5.0 7.0

30

50

200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts - 1/8 tf

tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

10

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

1.0 2.0

5.0 10 20

50

0.2

0.5

0

100

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 Ω

500 μA, RS = 200 Ω

100 μA, RS = 2.0 kΩ

50 μA, RS = 4.0 kΩ

f = 1.0 kHz

IC = 50 μA

100 μA

500 μA

1.0 mA

4.0

6.0

8.0

10

2.0

0

50 100 200

500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k 100 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

10

2.0

0.1

1.0

2.0 3.0 5.0 7.0 10

20 30

50

0.2 0.3 0.5 0.7

Ccb

20

30

Ceb

Figure 10. Current–Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

70

100

200

300

50

500

1.0

2.0 3.0

5.0 7.0 10

20 30

50 70 100

VCE = 20 V

TJ = 25°C

01-Jun-2002 Rev. A

Page 3 of 4

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ON Semiconductor	PZT2222A	113Kb / 5P	NPN Silicon Planar Epitaxial Transistor August, 2013 ??Rev. 9
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