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SPI07N65C3 数据表(PDF) 2 Page - Infineon Technologies AG |
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SPI07N65C3 数据表(HTML) 2 Page - Infineon Technologies AG |
2 / 15 page 20 10-12-21 Rev. 1.9 2 Page 2 SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA - - - 35 62 - Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=2.5A - 730 - Gate threshold voltage VGS(th) ID=350μA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C Tj=150°C - - 0.5 - 1 100 μA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A Tj=25°C Tj=150°C - - 0.54 1.46 0.6 - Ω Gate input resistance RG f=1MHz, open drain - 0.8 - |
类似零件编号 - SPI07N65C3 |
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类似说明 - SPI07N65C3 |
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