2N3440 datasheet(2/2 Pages) SEME-LAB

部件名	2N3440

功能描述	HIGH VOLTAGE NPN TRANSISTORS

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制造商	SEME-LAB [Seme LAB]

网页	http://www.semelab.co.uk

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IC = 50mA

2N3439

IC = 50mA

2N3440

VCE = 300V

2N3439

VCE = 200V

2N3440

VCE = 450V

2N3439

VCE = 300V

2N3440

VCB = 350V

2N3439

VCB = 250V

2N3440

VEB = 6V

IC = 50mA

IB = 4mA

IC = 50mA

IB = 4mA

IC = 20mA

VCE = 10V

IC = 2mA

VCE = 10V

VCEO(sus)* Collector – Emitter Sustaining Voltage

(IB = 0)

ICEO

Collector Cut-off Current

(IB = 0)

ICEX

Collector Cut-off Current

(VBE = -1.5V)

ICBO

Collector – Base Cut-off Current

(IE = 0)

IEBO

Emitter Cut-off Current (IC = 0)

VCE(sat)*

Collector – Emitter Saturation Voltage

VBE(sat)*

Base – Emitter Saturation Voltage

hFE*

DC Current Gain

2N3439

2N3440

Prelim.12/99

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

fT

Transition Frequency

Cob

Output Capacitance

hfe

Small Signal Current Gain

IC = 10mA

VCE = 10V

f = 5MHz

VCB = 10V

f = 1MHz

IC = 5mA

VCE = 10V

f = 1kHz

15

10

25

MHz

pF

—

* Pulse test tp = 300ms , d £ 2%

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

350

250

20

50

500

20

0.5

1.3

40

160

30

V

mA

µA

V

—

2N3439 only

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THERMAL DATA

Parameter

Min.

Typ.

Max.

Unit

RqJA

Thermal Resistance Junction to Ambient

175

°C/W

RqJC

Thermal Resistance Junction to Case

35

°C/W

类似零件编号 - 2N3440

制造商	部件名	数据表	功能描述
STMicroelectronics	2N3440	66Kb / 4P	SILICON NPN TRANSISTORS June 1997
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New Jersey Semi-Conduct...	2N3440	102Kb / 2P	High-Voltage Silicon N-P-N Transistors
Continental Device Indi...	2N3440	45Kb / 3P	NPN HIGH VOLTAGE SILICON TRANSISTORS

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类似说明 - 2N3440

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