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J110_SOT-23 数据表(PDF) 1 Page - Micross Components |
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J110_SOT-23 数据表(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES DIRECT REPLACEMENT FOR SILICONIX J110 LOW ON RESISTANCE rDS(on) ≤ 18Ω FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +150°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation 350mW MAXIMUM CURRENT Gate Current (Note 1) 50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = ‐25V Gate to Source Voltage VGSS = ‐25V J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐0.5 ‐‐ ‐4 VDS = 5V, ID = 1µA VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 10 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐0.01 ‐3 nA VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐‐ ‐0.01 ‐‐ VDG = 10V, ID = 10mA ID(off) Drain Cutoff Current ‐‐ 0.02 3 VDS = 5V, VGS = ‐10V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 18 Ω VGS = 0V, VDS ≤ 0.1V J110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 17 ‐‐ mS VDS = 5V, ID = 10mA , f = 1kHz gos Output Conductance ‐‐ 0.6 ‐‐ rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 18 Ω VGS = 0V, ID = 0A, f = 1kHz Ciss Input Capacitance ‐‐ 60 ‐‐ pF VDS = 0V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 11 ‐‐ VDS = 0V, VGS = ‐10V, f = 1MHz en Equivalent Noise Voltage ‐‐ 3.5 ‐‐ nV/√Hz VDS = 5V, ID = 10mA , f = 1kHz J110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 3 ns VDD = 1.5V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 1 td(off) Turn Off Time 4 tf Turn Off Fall Time 18 J110 SWITCHING CIRCUIT PARAMETERS VGS(L) ‐5V RL 150Ω ID(on) 10mA J110 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J110 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). J110 Applications: Analog Switches Commutators Choppers J110 Benefits: Low On Resistance Low insertion loss Low Noise Micross Components Europe Available Packages: J110 in SOT-23 J110 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which J110 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SWITCHING TEST CIRCUIT SOT-23 (Top View) |
类似零件编号 - J110_SOT-23 |
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类似说明 - J110_SOT-23 |
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