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J110_SOT-23 数据表(PDF) 1 Page - Micross Components

部件名 J110_SOT-23
功能描述  N-CHANNEL JFET
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制造商  MICROSS [Micross Components]
网页  http://www.micross.com
标志 MICROSS - Micross Components

J110_SOT-23 数据表(HTML) 1 Page - Micross Components

  J110_SOT-23 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J110 
LOW ON RESISTANCE 
rDS(on) ≤ 18Ω 
FAST SWITCHING 
t(on) ≤ 4ns 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐55°C to +150°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
350mW 
MAXIMUM CURRENT
Gate Current (Note 1) 
50mA 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
VGDS = ‐25V 
Gate to Source Voltage 
VGSS = ‐25V 
  
J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐25 
‐‐ 
‐‐ 
 
 
I= 1µA,   VDS = 0V 
VGS(off) 
Gate to Source Cutoff Voltage ‐0.5 
‐‐ 
‐4 
VDS = 5V, ID = 1µA 
VGS(F) 
Gate to Source Forward Voltage 
‐‐ 
0.7 
‐‐ 
I= 1mA,   VDS = 0V 
IDSS 
Drain to Source Saturation Current (Note 2) 
10 
‐‐ 
‐‐ 
mA 
VDS = 15V, VGS = 0V 
IGSS 
Gate Reverse Current 
‐‐ 
‐0.01 ‐3  
nA 
VGS = ‐15V,  VDS = 0V 
IG 
Gate Operating Current 
‐‐ 
‐0.01 
‐‐ 
VDG = 10V,  ID = 10mA 
ID(off) 
Drain Cutoff Current 
‐‐ 
 0.02 
VDS = 5V, VGS = ‐10V 
rDS(on) 
Drain to Source On Resistance 
‐‐ 
‐‐ 
18 Ω 
VGS = 0V,  VDS ≤ 0.1V 
 
 
    
 
J110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
gfs 
Forward Transconductance 
‐‐ 
17 
‐‐ 
mS 
VDS = 5V,  ID = 10mA , f = 1kHz 
gos 
Output Conductance 
‐‐ 
0.6 
‐‐ 
rDS(on) 
Drain to Source On Resistance 
‐‐ 
‐‐ 
18 Ω 
VGS = 0V, ID = 0A,  f = 1kHz 
Ciss 
Input Capacitance 
‐‐ 
60 
‐‐ 
 
pF 
VDS = 0V, VGS = 0V, f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐ 
11 
‐‐ 
VDS = 0V, VGS = ‐10V, f = 1MHz 
en 
Equivalent Noise Voltage 
‐‐ 
3.5 
‐‐ 
nV/√Hz 
VDS = 5V,  ID = 10mA , f = 1kHz 
 
 
    
 
J110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC  
UNITS 
CONDITIONS 
td(on) 
Turn On Time 
3  
 
ns 
VDD = 1.5V 
VGS(H) = 0V 
 
See Switching Circuit 
tr 
Turn On Rise Time 
td(off) 
Turn Off Time 
tf 
Turn Off Fall Time 
18 
                                                                                                                 
J110 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
VGS(L) ‐5V  
RL 
150Ω 
 
ID(on) 
10mA  
  
 
  
 
  
 
  
 
  
 
J110
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J110
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J110 Applications:
Analog Switches
Commutators
Choppers
J110 Benefits:
Low On Resistance
Low insertion loss
Low Noise
Micross Components Europe
Available Packages:
J110 in SOT-23
J110 in bare die.
Please contact Micross for full
package and die dimensions
Note 1 ‐ Absolute maximum ratings are limiting values above which J110 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
SWITCHING TEST CIRCUIT
SOT-23 (Top View)


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