BF998_07 datasheet(4/9 Pages) INFINEON

部件名	BF998

功能描述	Silicon N_Channel MOSFET Tetrode

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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4 / 9 page

2007-04-20

4

BF998...

Total power dissipation Ptot = ƒ(TS)

BF998, BF998R

0

15

30

45

60

75

90

105 120 °C

150

TS

0

20

40

60

80

100

120

140

160

180

mW

220

Output characteristics ID = ƒ(VDS)

VG2S = 4 V

VG1S = Parameter

0

2

4

6

8

10

V

14

VDS

0

2

4

6

8

10

12

14

16

18

20

22

mA

26

0.4V

0.2V

0V

-0.2V

-0.4V

Gate 1 forward transconductance

gfs = ƒ(ID)

VDS = 5V, VG2S = Parameter

0

4

8

12

16

mA

24

ID

0

2

4

6

8

10

12

14

16

18

20

22

mS

26

4V

2V

1V

0V

Gate 1 forward transconductance

gfs1 = ƒ (VG1S)

-1

-0.75

-0.5

-0.25

0

0.25

V

0.75

VG1S

0

2

4

6

8

10

12

14

16

18

20

22

mS

26

4V

2V

1V

0V

类似零件编号 - BF998_07

制造商	部件名	数据表	功能描述
Vishay Siliconix	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08

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类似说明 - BF998_07

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Infineon Technologies A...	BF1009S	251Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF5030W	168Kb / 10P	Silicon N-Channel MOSFET Tetrode 2006-04-13
	BF5030	585Kb / 13P	Silicon N-Channel MOSFET Tetrode 2009-05-05
	BF2030	277Kb / 6P	Silicon N-Channel MOSFET Tetrode Apr-23-2004
	BF1009S	84Kb / 8P	Silicon N-Channel MOSFET Tetrode 2007-04-20
	BF2040	210Kb / 11P	Silicon N-Channel MOSFET Tetrode 2007-06-01
	BF998	249Kb / 6P	Silicon N-Channel MOSFET Tetrode Feb-13-2004
	BF1005	252Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
	BF1005S	252Kb / 5P	Silicon N-Channel MOSFET Tetrode Feb-18-2004
Siemens Semiconductor G...	BF2000	19Kb / 3P	Silicon N Channel MOSFET Tetrode