6N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-500.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Continuous

6 *

A

Drain Current

Pulsed (Note 1)

22 *

A

Single Pulsed (Note 2)

680

mJ

Avalanche Energy

Repetitive (Note 1)

15.8

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220

138

W

Power Dissipation

TO-220F/TO-220F1

51

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

* Drain current limited by maximum junction temperature.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

°C/W

Junction to Ambient

TO-220F/TO-220F1

62.5

°C/W

TO-220

0.9

°C/W

Junction to Case

TO-220F/TO-220F1

2.45

°C/W