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2SD1060 数据表(PDF) 2 Page - Unisonic Technologies |
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2SD1060 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SD1060 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R208-023.C ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 6 V Collector Current IC 5 A Collector Current (Pulse) ICP 9 A SOT-89 500 mW TO-126/TO-251 1 W TO-252/TO-220 2 W Collector Dissipation TO-92 PC 625 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-to-Base Breakdown Voltage BVCBO IC =1mA, IE=0 60 V Collector-to-Emitter Breakdown Voltage BVCEO IC=1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage BVEBO IC =0, IE=1mA 6 V Collector Cut-Off Current ICBO VCB=40V, IE=0 0.1 mA Emitter Cut-Off Current IEBO VEB=4V, IC=0 0.1 mA hFE1 VCE=2V, IC=1A 70 360 DC Current Gain hFE2 VCE=2V, IC=3A 30 Gain Bandwidth Product fT VCE =5V, IC =1A 30 MHZ Output Capacitance Cob VCB =10V, f=1MHz 100 pF Collector-to-Emitter Saturation Voltage VCE(SAT) IC=3A, IB=0.3A 0.4 V Turn-ON Time tON See specified test circuit 0.1 µs Storage Time tSTG See specified test circuit 1.4 µs Fall Time tF See specified test circuit 0.2 µs CLASSIFICATION of hFE1 RANK Q R S RANGE 70-140 100-200 180-360 |
类似零件编号 - 2SD1060_08 |
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类似说明 - 2SD1060_08 |
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