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2SC2712G-X-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC2712G-X-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC2712 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R206-029.E ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ +125 °С Storage Temperature TSTG -55 ~ +125 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 0.1 μA DC Current Gain hFE VCE=6V, IC=2mA 70 700 Collector-Emitter Saturation Voltage VCE(SAT) IC=100mA, IB=10mA 0.1 0.25 V Transistor Frequency fT VCE=10V, IC=1mA 80 MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA f=1kHz, Rg=10KΩ 1.0 10 dB CLASSIFICATION OF hFE RANK Y G L RANGE 120~240 200~400 350~700 |
类似零件编号 - 2SC2712G-X-AE3-R |
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类似说明 - 2SC2712G-X-AE3-R |
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