ISL24212

5

FN7590.0

March 15, 2011

Output Swing High

17.85

17.9

V

Short Circuit Current (Sinking)

300

430

mA

Short Circuit Current (Sourcing)

450

555

mA

SR

Slew Rate (Rising)

1K

70

116

V/µs

Slew Rate (Falling)

1K

50

93

V/µs

Settling Time to 0.2%

150

ns

BW

-3dB Bandwidth

60

MHz

EEPROM CHARACTERISTICS

EEPROM Programming Time (internal)

100

ms

UP/DOWN COUNTER CONTROL INPUTS (SEE FIGURE 11)

CE and CTL Input Logic High Threshold

V

CE and CTL Input Logic Low Threshold

V

CE Input Pull Down Current Sink

0.5

1.5

µA

CTL Input Bias Current

CTL = GND (sourcing)

7

15

µA

7

15

µA

CE to CTL Start Delay

50

µs

EEPROM Recall Time (after CE de-asserted)

10

ms

CTL High Pulse Rejection Width

20

µs

CTL Low Pulse Rejection Width

20

µs

CTL High Minimum Valid Pulse Width

200

µs

CTL Low Minimum Valid Pulse Width

200

µs

CTL Minimum Time Between Counts

10

µs

CTL EEPROM Program Voltage (see Figure 9)

4.9

19

V

CTL EEPROM Programming Signal Time

200

µs

CTL High-to-Mid to DVR_OUT propagation time

65

µs

CTL Low-to-Mid to DVR_OUT propagation time

65

µs

NOTE:

6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.

-40°C to +85°C.

(Continued)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

(Note 6)

TYP

MAX

(Note 6)

UNITS