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LE28CV1001T 数据表(PDF) 7 Page - Sanyo Semicon Device |
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LE28CV1001T 数据表(HTML) 7 Page - Sanyo Semicon Device |
7 / 14 page AC Electrical Characteristics at Ta = 0 to +70°C, V DD = 3.3 V ± 0.3 V AC Testing Conditions (See Figure 8) Input rise and fall time: ..................10 ns (max.) Output load: ....................................1 TTL gate + 30 pF Read Cycle Page Write Cycle Note: * typ is reference value at V DD = 3.3 V and Ta = 25°C Figure 1 Read Cycle No. 5409-7/14 LE28CV1001M, T-12/15 Parameter Symbol min typ* max Unit Write cycle time (erase and program) t WC 5 10 ms Address setup time t AS 0 ns Address hold time t AH 100 ns CE setup time t CS 0 ns CE hold time t CH 0 ns OE setup time t OES 0 ns OE hold time t OEH 0 ns CE pulse width t CP 120 ns WE pulse width t WP 120 ns Data setup time t DS 100 ns Data hold time t DH 0 ns Byte load cycle time t BLC 0.10 100 µs Byte load time out time t BLCO 200 µs LE28CV1001M, T Parameter Symbol -12 -15 Unit min max min max Read cycle time t RC 120 150 ns CE access time t CE 120 150 ns Address access time t AA 120 150 ns OE access time t OE 80 90 ns Output low-impedance time from CE t CLZ 0 0 ns Output low-impedance time from OE t OLZ 0 0 ns Output high-impedance time from CE t CHZ 50 50 ns Output high-impedance time from OE t OHZ 50 50 ns Output valid time from address input t OH 0 0 ns |
类似零件编号 - LE28CV1001T |
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类似说明 - LE28CV1001T |
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