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2N3737UB 数据表(PDF) 1 Page - Microsemi Corporation |
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2N3737UB 数据表(HTML) 1 Page - Microsemi Corporation |
1 / 5 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 T4-LDS-0173 Rev. 1 (101069) Page 1 of 5 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Min. Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = +25°C 2N3735, 2N3735L 2N3737 2N3737UB PT 1.0 (1) 0.5 (3) 0.5 (5) W W W Total Power Dissipation @ TC = +25°C 2N3735, 2N3735L 2N3737 2N3737UB PT 2.9 (2) 1.9 (4) N/A W W W Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. (1) Derate linearly at 5.71 mW/°C above TA = +25°C (2) Derate linearly at 16.6 mW/°C above TA = +25°C (3) Derate linearly at 2.86 mW/°C above TA = +25°C (4) Derate linearly at 11.3 mW/°C above TA = +25°C (5) Derate linearly at 3.07 mW/°C above TA = +25°C (6) TA = +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1 – layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2 mm), RθJA with a defined thermal resistance condition included is measured at PT = 500mW. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 40 Vdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 30Vd ICBO 10 250 μAdc ηAdc TO-5* 2N3735L TO-39* (TO-205AD) 2N3735 3 PIN 2N3737UB TO-46 (TO-206AB) 2N3737 |
类似零件编号 - 2N3737UB |
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类似说明 - 2N3737UB |
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