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2N3506A 数据表(PDF) 2 Page - Microsemi Corporation |
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2N3506A 数据表(HTML) 2 Page - Microsemi Corporation |
2 / 2 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 T4-LDS-0016 Rev. 1 (072040) Page 2 of 2 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 3.0Adc, VCE = 5Vdc 2N3506 2N3507 hFE 25 20 Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1.0Vdc 2N3506 2N3507 hFE 25 17 Forward-Current Transfer Ratio IC = 500mAdc, VCE = 2Vdc 2N3506A 2N3507A hFE 25 17 Collector-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc VCE(sat) 0.5 Vdc Collector-Emitter Saturation Voltage IC = 1.5Adc, IB = 150mAdc VCE(sat) 1.0 Vdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc VCE(sat) 1.5 Vdc Base-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc VBE(sat) 1.0 Vdc Base-Emitter Saturation Voltage IC = 1.5Adc, IB = 150mAdc VBE(sat) 0.8 1.3 Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc VBE(sat) 2.0 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 20MHz |hfe| 3.0 15 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 40 pF Input Capacitance VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 300 pF SWITCHING CHARACTERISTICS (4) Parameters / Test Conditions Symbol Min. Max. Unit Delay Time IC = 1.5Adc, IB1 = 150mAdc td 15 ns Rinse Time IC = 1.5Adc, IB1 = 150mAdc tr 30 ns Storage Time IC = 1.5Adc, IB1 = IB2 = 150mAdc ts 55 ns Fall Time IC = 1.5Adc, IB1 = IB2 = 150mAdc tf 35 ns (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. (4) Consult MIL-PRF-19500/349 For Additional Infornation. |
类似零件编号 - 2N3506A |
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类似说明 - 2N3506A |
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