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2SD1410A 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SD1410A
功能描述  High Voltage Switching Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SD1410A 数据表(HTML) 1 Page - Toshiba Semiconductor

  2SD1410A Datasheet HTML 1Page - Toshiba Semiconductor 2SD1410A Datasheet HTML 2Page - Toshiba Semiconductor 2SD1410A Datasheet HTML 3Page - Toshiba Semiconductor 2SD1410A Datasheet HTML 4Page - Toshiba Semiconductor  
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2SD1410A
2009-12-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1410A
High Voltage Switching Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
250
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
6
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
Collector
Industrial Applications
≈ 4 kΩ


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