数据搜索系统,热门电子元器件搜索 |
|
2SD1314 数据表(PDF) 2 Page - Toshiba Semiconductor |
|
2SD1314 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD1314 2006-11-21 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 600 V, IE = 0 ― ― 1.0 mA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 200 mA Collector-emitter sustaining voltage VCEO (SUS) IC = 0.5 A, L = 40 mH 450 ― ― V DC current gain hFE VCE = 5 V, IC = 15 A 100 ― ― Collector-emitter saturation voltage VCE (sat) ― ― 2.0 V Base-emitter saturation voltage VBE (sat) IC = 15 A, IB = 0.4 A ― ― 2.5 V Collector output capacitance Cob VCB = 50 V, IE = 0, f = 1 MHz ― 150 ― pF Turn-on time ton ― ― 1.0 Storage time tstg ― ― 12 Switching time Fall time tf IB1 = −IB2 = 0.4 A, duty cycle = 0.5% ― ― 3.0 μs Marking 50 μs VCC = 300 V Output IB2 IB1 Input 0 2SD1314 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
类似零件编号 - 2SD1314_06 |
|
类似说明 - 2SD1314_06 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |