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2SD1314 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 2SD1314
功能描述  High Power Switching Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SD1314 数据表(HTML) 2 Page - Toshiba Semiconductor

  2SD1314_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SD1314_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SD1314_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SD1314_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SD1314_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SD1314
2006-11-21
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 600 V, IE = 0
―
―
1.0
mA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
―
200
mA
Collector-emitter sustaining voltage
VCEO (SUS) IC = 0.5 A, L = 40 mH
450
―
―
V
DC current gain
hFE
VCE = 5 V, IC = 15 A
100
―
―
Collector-emitter saturation voltage
VCE (sat)
―
―
2.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 15 A, IB = 0.4 A
―
―
2.5
V
Collector output capacitance
Cob
VCB = 50 V, IE = 0, f = 1 MHz
―
150
―
pF
Turn-on time
ton
―
―
1.0
Storage time
tstg
―
―
12
Switching time
Fall time
tf
IB1 = −IB2 = 0.4 A, duty cycle = 0.5%
―
―
3.0
μs
Marking
50 μs
VCC = 300 V
Output
IB2
IB1
Input
0
2SD1314
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


类似零件编号 - 2SD1314_06

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