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ZXMP6A17G 数据表(PDF) 4 Page - Diodes Incorporated

部件名 ZXMP6A17G
功能描述  60V P-CHANNEL ENHANCEMENT MODE MOSFET
Download  8 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXMP6A17G 数据表(HTML) 4 Page - Diodes Incorporated

  ZXMP6A17G Datasheet HTML 1Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 2Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 3Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 4Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 5Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 6Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 7Page - Diodes Incorporated ZXMP6A17G Datasheet HTML 8Page - Diodes Incorporated  
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ZXMP6A17G
Document Number DS33375 Rev. 2 - 2
4 of 8
www.diodes.com
August 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
μA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 6)
RDS (ON)
0.096
0.125
VGS = -10V, ID = -2.2A
0.120
0.190
VGS = -4.5V, ID = -1.8A
Forward Transconductance (Notes 6 & 7)
gfs
4.7
S
VDS = -15V, ID = -2.2A
Diode Forward Voltage (Note 6)
VSD
-0.85
-0.95
V
IS = -2.0A, VGS = 0V, TJ = 25°C
Reverse recovery time (Note 7)
trr
25.1
ns
IS = -1.7A, di/dt = 100A/μs,
TJ = 25°C
Reverse recovery charge (Note 7)
Qrr
27.2
nC
DYNAMIC CHARACTERISTICS (
Note 7)
Input Capacitance
Ciss
637
pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
70.0
pF
Reverse Transfer Capacitance
Crss
53.0
pF
Total Gate Charge (Note 8)
Qg
9.0
nC
VGS = -4.5V
VDS = -30V
ID = -2.2A
Total Gate Charge (Note 8)
Qg
17.7
nC
VGS = -10V
Gate-Source Charge (Note 8)
Qgs
1.6
nC
Gate-Drain Charge (Note 8)
Qgd
4.4
nC
Turn-On Delay Time (Note 8)
tD(on)
2.6
ns
VDD = -30V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 8)
tr
3.4
ns
Turn-Off Delay Time (Note 8)
tD(off)
26.2
ns
Turn-Off Fall Time (Note 8)
tf
11.3
ns
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.


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