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ZXMP6A17DN8 数据表(PDF) 4 Page - Diodes Incorporated

部件名 ZXMP6A17DN8
功能描述  DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Download  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXMP6A17DN8 数据表(HTML) 4 Page - Diodes Incorporated

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ZXMP6A17DN8
SEMICO NDUC TORS
ISSUE 1 - OCTOBER 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-60
V
ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1.0
AVDS=-60V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
-1.0
V
I
D
=-250 A, VDS=VGS
Static Drain-Source On-State
Resistance
(1)
RDS(on)
0.125
0.190
VGS=-10V, ID=-2.3A
VGS=-4.5V, ID=-1.9A
Forward Transconductance
(1)(3)
gfs
4.7
S
VDS=-15V,ID=-2.3A
DYNAMIC
(3)
Input Capacitance
Ciss
637
pF
VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
53
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
2.6
ns
VDD =-30V, ID=-1A
RG≅6.0Ω,VGS=-10V
Rise Time
tr
3.4
ns
Turn-Off Delay Time
td(off)
26.2
ns
Fall Time
tf
11.3
ns
Gate Charge
Qg
9.8
nC
VDS=-30V,VGS=-5V,
ID=-2.2A
Total Gate Charge
Qg
17.7
nC
VDS=-30V,VGS=-10V,
ID=-2.2A
Gate-Source Charge
Qgs
1.6
nC
Gate-Drain Charge
Qgd
4.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD
-0.85
-0.95
V
TJ=25°C, IS=-2A,
VGS=0V
Reverse Recovery Time
(3)
trr
25.1
ns
TJ=25°C, IF=-1.7A,
di/dt= 100A/
µs
Reverse Recovery Charge
(3)
Qrr
27.2
nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.


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