LC322271T-70 datasheet(4/29 Pages) SANYO

部件名	LC322271T-70

功能描述	2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write

Download	29 Pages

Scroll/Zoom	100%

制造商	SANYO [Sanyo Semicon Device]

网页	https://www.sanyo-av.com/us/

标志

4 / 29 page

DC Recommended Operating Ranges at Ta = 0 to +70°C

Note: 2. All voltages are referenced to VSS.

*: –2.0 V when pulse width is less than 20 ns.

DC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10%

Note: 3. All current values are measured at minimum cycle rate. Since current flows immoderately, if cycle time is longer than shown here, current value

becomes smaller.

4. ICC1 and ICC4 are dependent on output loads. Maximum values for ICC1 and ICC4 represent values with output open.

5. Address change is less than or equal to one time during RAS = VIL. Concerning ICC4, it is less than or equal to one time during 1 cycle (tPC).

AC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10% (Notes 6, 7 and 8)

No. 5085-4/29

LC322271J, M, T-70/80

Parameter

Symbol

min

typ

max

Unit

Note

Power supply voltage

VCC

4.5

5.0

5.5

V

2

Input high level voltage

VIH

2.4

6.5

V

2

Input low level voltage

VIL

–1.0*

+0.8

V

2

(A0 to A7, A8R, RAS, CAS, UW, LW, OE)

Input low level voltage (I/O1 to I/O16)

VIL

–0.5*

+0.8

V

2

Parameter

Symbol

-70

-80

Unit

Note

min

max

min

max

Random read, write cycle time

tRC

130

150

ns

Read-write/read-modify-write cycle time

tRWC

190

200

ns

Fast page mode cycle time

tPC

45

55

ns

Fast page mode read-write/read-modify-write cycle time

tPRWC

95

100

ns

RAS access time

tRAC

70

80

ns

9, 14, 15

CAS access time

tCAC

20

30

ns

9, 14

Column address access time

tAA

35

45

ns

9, 15

CAS precharge access time

tCPA

40

50

ns

9

Output low-impedance time from CAS low

tCLZ

0

ns

9

Output buffer turn-off delay time

tOFF

0

20

0

20

ns

10

Rise, fall time

tT

3

50

3

50

ns

RAS precharge time

tRP

50

60

ns

RAS pulse width

tRAS

70

10000

80

10000

ns

RAS pulse width for fast page mode cycle only

tRASP

70

100000

80

100000

ns

Continued on next page.

LC322271J, M, T

Parameter

Symbol

Conditions

-70

-80

Unit

Note

min

max

min

max

Operating current

ICC1

RAS, CAS, address cycling: tRC = tRC min

125

115

mA

3, 4, 5

(Average current during operation)

Standby current

ICC2

RAS = CAS = VIH

2

mA

RAS-only refresh current

ICC3

RAS cycling, CAS = VIH: tRC = tRC min

125

115

mA

3, 5

Fast page mode current

ICC4

RAS = VIL, CAS, address cycling: tPC = tPC min

115

90

mA

3, 4, 5

Standby current

ICC5

RAS = CAS = VCC – 0.2 V

1

mA

CAS-before-RAS refresh current

ICC6

RAS, CAS cycling: tRC = tRC min

125

115

mA

3

Input leakage current

IIL

0 V

≤ V

IN ≤ 6.5 V, pins other than test pin = 0 V

–10

+10

–10

+10

µA

Output leakage current

IOL

DOUT disable, 0 V ≤ VOUT ≤ 5.5 V

–10

+10

–10

+10

µA

Output high level voltage

VOH

IOUT = –2.5 mA

2.4

V

Output low level voltage

VOL

IOUT = 2.1 mA

0.4

V

类似零件编号 - LC322271T-70

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	LC322260J	766Kb / 33P	2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write???
	LC322260T-70	766Kb / 33P	2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write???
	LC322260T-80	766Kb / 33P	2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write???

More results

类似说明 - LC322271T-70

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	LC322260J	766Kb / 33P	2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write???
	LC321664AJ	964Kb / 30P	1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
	LC321664BJ	583Kb / 28P	1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write?
	LC321667BJ	624Kb / 30P	1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
	LC382161T-17	1Mb / 55P	2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
	LC361000AMLL	158Kb / 8P	1 MEG (131072 words X 8 bits) SRAM
	LC32464P	278Kb / 13P	256K (65536 words X 4 bits) DRAM Fast Page Mode
Micron Technology	MT4C4005	859Kb / 12P	1 MEG x 4 DRAM FAST PAGE MODE WRITE-PER-BIT
Austin Semiconductor	MT4C4001J	251Kb / 20P	1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor	MT4C4001J	1Mb / 21P	1 MEG x 4 DRAM Fast Page Mode DRAM