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FC654601 数据表(PDF) 2 Page - Panasonic Semiconductor |
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FC654601 数据表(HTML) 2 Page - Panasonic Semiconductor |
2 / 5 page Ver. AED This product complies with the RoHS Directive (EU 2002/95/EC). FC654601 2 Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 m A Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ± 10 m A Gate threshold voltage VTH ID = 1.0 mA, VDS = 3.0 V 0.9 1.2 1.5 V Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 2.5 V 8 15 W ID = 10 mA, VGS = 4.0 V 6 12 W Forward transfer admittance Yfs ID = 10 mA, VDS = 3.0 V 20 60 mS Short-circuit input capacitance (Common source) Ciss VDS = 3 V, VGS = 0, f = 1 MHz 12 pF Short-circuit output capacitance (Common source) Coss 7 pF Reverse transfer capacitance (Common source) Crss 3 pF Turn-on time * ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 100 ns Turn-off time * toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 100 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = 3 V ID = 10 mA RL = 300 Ω VOUT VIN D G S 50 Ω VIN 90% 10% 10% 90% VOUT ton toff VGS = 0 V to 3 V |
类似零件编号 - FC654601 |
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类似说明 - FC654601 |
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