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2SC3709A 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SC3709A
功能描述  High-Current Switching Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC3709A 数据表(HTML) 1 Page - Toshiba Semiconductor

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2SC3709A
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3709A
High-Current Switching Applications
• Low collector saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1451A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
12
A
Base current
IB
2
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
10
µA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
10
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
50
V
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
70
240
DC current gain
hFE (2)
VCE = 1 V, IC = 6 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 6 A, IB = 0.3 A
0.25
0.4
V
Base-emitter saturation voltage
VBE (sat)
IC = 6 A, IB = 0.3 A
0.9
1.2
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
90
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
180
pF
Turn-on time
ton
0.2
Storage time
tstg
1.0
Switching time
Fall time
tf
IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%
0.2
µs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
20 µs
VCC ≈ 30 V
Output
IB2
IB1
Input


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