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2SC3709A 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SC3709A 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC3709A 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A Collector power dissipation (Tc = 25°C) PC 30 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 10 µA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 50 ― ― V hFE (1) (Note) VCE = 1 V, IC = 1 A 70 ― 240 DC current gain hFE (2) VCE = 1 V, IC = 6 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 6 A, IB = 0.3 A ― 0.25 0.4 V Base-emitter saturation voltage VBE (sat) IC = 6 A, IB = 0.3 A ― 0.9 1.2 V Transition frequency fT VCE = 5 V, IC = 1 A ― 90 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 180 ― pF Turn-on time ton ― 0.2 ― Storage time tstg ― 1.0 ― Switching time Fall time tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% ― 0.2 ― µs Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) 20 µs VCC ≈ 30 V Output IB2 IB1 Input |
类似零件编号 - 2SC3709A |
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类似说明 - 2SC3709A |
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