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2SA1327A 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SA1327A 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1327A 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta −10 0 0 Common emitter Tc = 25°C −20 −2 −4 −6 −8 −10 −12 −2 −4 −6 −8 −40 −60 −80 IB = −10 mA −10 0 0 Common emitter VCE = −2 V −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −2 −4 −6 −8 −25 25 Tc = 100°C 1000 10 −0.1 30 50 100 300 500 −0.3 −1 −3 −10 −30 Common emitter VCE = −2 V Tc = −100°C 25 −25 −0.1 −0.3 −1 −3 −10 −30 −1 −0.01 −0.03 −0.05 −0.1 −0.3 −0.5 Tc = 100°C 25 −25 Common emitter IC/IB = 20 0 0 20 40 60 80 100 120 140 160 5 10 15 20 25 30 35 (1) Tc = Ta Infinite heat sink (2) Ta = 25°C (1) (2) −0.3 −1 −3 −10 −50 −0.1 −0.3 −1 −3 −10 −30 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) 100 ms* 10 ms* 500 ms* DC operation Tc = 25°C VCEO max −30 |
类似零件编号 - 2SA1327A_06 |
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类似说明 - 2SA1327A_06 |
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