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2SA1244 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SA1244
功能描述  High Current Switching Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SA1244 数据表(HTML) 1 Page - Toshiba Semiconductor

  2SA1244 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1244 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1244 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1244 Datasheet HTML 4Page - Toshiba Semiconductor 2SA1244 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SA1244
2010-02-05
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A)
• High speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC3074
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−5
A
Base current
IB
−1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)


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