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STD30PF03L-1 数据表(PDF) 3 Page - STMicroelectronics |
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STD30PF03L-1 数据表(HTML) 3 Page - STMicroelectronics |
3 / 13 page STD30PF03LT4 - STD30PF03L-1 Electrical characteristics 3/13 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS=Max rating VDS=Max rating,Tc=100 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±16 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 12 A VGS= 5 V, ID= 12 A 0.025 0.032 0.028 0.040 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS =15 V, ID= 12 A 23 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1MHz, VGS=0 1670 345 120 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 24 A VGS =5 V Figure 15 18.6 5.5 11 28 nC nC nC |
类似零件编号 - STD30PF03L-1 |
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类似说明 - STD30PF03L-1 |
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