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BTA16-800G-TR 数据表(PDF) 2 Page - STMicroelectronics

部件名 BTA16-800G-TR
功能描述  16 A Snubberless?? logic level and standard Triacs
Download  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BTA16-800G-TR 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
BTA16, BTB16, T1610, T1635
2/10
Doc ID 7471 Rev 9
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current
(full sine wave)
D2PAK /
TO-220AB
Tc = 100 °C
16
A
TO-220AB
insulated
Tc = 86 °C
ITSM
Non repetitive surge peak on-state
current
(full cycle, Tj initial = 25 °C)
F = 50 Hz
t = 20 ms
160
A
F = 60 Hz
t = 16.7 ms
168
I²tI²t value for fusing
tp = 10 ms
144
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125 °C
50
A/µs
VDSM/
VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Storage temperature range
-40 to + 150
Tj
Maximum operating junction temperature
-40 to + 125
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol
Test conditions
Quadrant
T1610 T1635
BTA16 / BTB16
Unit
SW
CW
BW
IGT
(1)
1.
Minimum IGT is guaranted at 5% of IGT max
VD = 12 V
RL = 33 Ω
I - II - III
Max.
10
35
10
35
50
mA
VGT
I - II - III
Max.
1.3
V
VGD
VD = VDRM
RL = 3.3 kΩ
Tj = 125 °C
I - II - III
Min.
0.2
V
IH
(2)
2.
For both polarities of A2 referenced to A1
IT = 500 mA
Max.
15
35
15
35
50
mA
IL
IG = 1.2 IGT
I - III
Max.
25
50
25
50
70
mA
II
30
60
30
60
80
dV/dt (2)
VD = 67 %VDRM
gate open
Tj = 125 °C
Min.
40
500
40
500
1000
V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs Tj = 125 °C
Min.
8.5
-
8.5
-
-
A/ms
(dV/dt)c = 10 V/µs
Tj = 125 °C
3.0
-
3.0
-
-
Without snubber
Tj = 125 °C
-
8.5
-
8.5
14


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