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IRF7342QPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF7342QPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 7 page HEXFET® Power MOSFET 08/03/10 Description VDSS = -55V RDS(on) = 0.105Ω IRF7342QPbF www.irf.com 1 Parameter Max. Units VDS Drain- Source Voltage -55 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3.4 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.7 A IDM Pulsed Drain Current -27 PD @TC = 25°C Power Dissipation 2.0 PD @TC = 70°C Power Dissipation 1.3 Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 20 V VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V EAS Single Pulse Avalanche Energy 114 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance Absolute Maximum Ratings W D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 SO-8 l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD - 96109A |
类似零件编号 - IRF7342QPBF_10 |
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类似说明 - IRF7342QPBF_10 |
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