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SPI20N60CFD 数据表(PDF) 1 Page - Infineon Technologies AG |
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SPI20N60CFD 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 200 7-02-01 Rev. 2. 5 Page 1 SP I20N60CFD Cool MOS™ Power Transistor V DS @ T jmax 650 V RDS(on) 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge PG-TO2 62 Type Package Pb-free SP I20N60CFD PG-TO2 62 Yes Marking 20N60CFD Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 °C TC = 100 °C ID 20.7 13.1 A Pulsed drain current, tp limited by Tjmax ID puls 52 Avalanche energy, single pulse I D = 10 A, V DD = 50 V EAS 690 mJ Avalanche energy, repetitive t AR limited by T jmax 1) I D = 20 A, V DD = 50 V E AR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Reverse diode dv/dt IS=20.7A, VDS=480V, Tj=125°C dv/dt 40 V/ns Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 208 W Operating and storage temperature T j , T stg -55... +150 °C |
类似零件编号 - SPI20N60CFD |
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类似说明 - SPI20N60CFD |
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