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SPI20N60CFD 数据表(PDF) 1 Page - Infineon Technologies AG

部件名 SPI20N60CFD
功能描述  Cool MOS??Power Transistor Feature New revolutionary high voltage technology
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPI20N60CFD 数据表(HTML) 1 Page - Infineon Technologies AG

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200
7-02-01
Rev. 2.
5
Page 1
SP
I20N60CFD
Cool MOS™ Power Transistor
V
DS
@ T
jmax
650
V
RDS(on)
0.22
ID
20.7
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Intrinsic fast-recovery body diode
• Extreme low reverse recovery charge
PG-TO2
62
Type
Package
Pb-free
SP
I20N60CFD
PG-TO2
62
Yes
Marking
20N60CFD
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C = 25 °C
TC = 100 °C
ID
20.7
13.1
A
Pulsed drain current, tp limited by Tjmax
ID puls
52
Avalanche energy, single pulse
I
D = 10 A, V DD = 50 V
EAS
690
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D = 20 A, V DD = 50 V
E
AR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125°C
dv/dt
40
V/ns
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
208
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C


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