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BC808-25W 数据表(PDF) 2 Page - Infineon Technologies AG

部件名 BC808-25W
功能描述  PNP Silicon AF Transistor
Download  11 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BC808-25W 数据表(HTML) 2 Page - Infineon Technologies AG

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2007-06-08
2
BC807.../BC808...
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
BC807...
BC808...
VCEO
45
25
V
Collector-base voltage
BC807...
BC808...
VCBO
50
30
Emitter-base voltage
VEBO
5
Collector current
IC
500
mA
Peak collector current
ICM
1000
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
TS ≤ 79 °C BC807, BC808
TS ≤ 130 °C BC807W, BC808W
Ptot
330
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
BC807, BC808
BC807W, BC808W
RthJS
≤ 215
≤ 80
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance


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