BTB12-600CW3G datasheet(1/6 Pages) ONSEMI

部件名	BTB12-600CW3G

功能描述	Silicon Bidirectional Thyristors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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February, 2008 - Rev. 1

1

Publication Order Number:

BTB12-600CW3/D

BTB12-600CW3G,

BTB12-800CW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full‐wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

• Blocking Voltage to 800 V

• On‐State Current Rating of 12 Amperes RMS at 25°C

• Uniform Gate Trigger Currents in Three Quadrants

• High Immunity to dV/dt - 1500 V/ms minimum at 125°C

• Minimizes Snubber Networks for Protection

• Industry Standard TO‐220AB Package

• High Commutating dI/dt - 3.0 A/ms minimum at 125°C

• These are Pb-Free Devices

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (Note 1)

(TJ = -40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

BTB12-600CW3G

BTB12-800CW3G

VDRM,

VRRM

600

800

V

On‐State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80°C)

IT(RMS)

12

A

Peak Non‐Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TC = 25°C)

ITSM

120

A

Circuit Fusing Consideration (t = 10 ms)

I2t

78

A2sec

Non-Repetitive Surge Peak Off-State

Voltage (TJ = 25°C, t = 10ms)

VDSM/

VRSM

VDSM/VRSM

+100

V

Peak Gate Current (TJ = 125°C, t = 20ms)

IGM

4.0

A

Peak Gate Power

(Pulse Width

≤ 1.0 ms, TC = 80°C)

PGM

20

W

Average Gate Power (TJ = 125°C)

PG(AV)

1.0

W

Operating Junction Temperature Range

TJ

-40 to +125

°C

Storage Temperature Range

Tstg

-40 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

TO-220AB

CASE 221A

STYLE 4

1

http://onsemi.com

BTB12-xCWG

AYWW

MARKING

DIAGRAM

x

= 6 or 8

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb-Free Package

2

3

Device

Package

Shipping

ORDERING INFORMATION

BTB12-600CW3G

TO-220AB

(Pb-Free)

50 Units / Rail

PIN ASSIGNMENT

1

2

3

Gate

Main Terminal 1

Main Terminal 2

4

Main Terminal 2

MT1

G

MT2

BTB12-800CW3G

TO-220AB

(Pb-Free)

50 Units / Rail

*For additional information on our Pb-Free strategy and

soldering details, please download the ON Semicon‐

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

4

类似零件编号 - BTB12-600CW3G

制造商	部件名	数据表	功能描述
ON Semiconductor	BTB12-600CW3G	92Kb / 6P	Triacs Silicon Bidirectional Thyristors February, 2008 - Rev. 1

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