BCW30LT1 datasheet(2/7 Pages) ONSEMI

部件名	BCW30LT1

功能描述	General Purpose Transistors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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BCW30LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −2.0 mAdc, IE = 0)

V(BR)CEO

−32

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc, VEB = 0)

V(BR)CES

−32

−

Vdc

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IC = 0)

V(BR)CBO

−32

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCB = −32 Vdc, IE = 0)

(VCB = −32 Vdc, IE = 0, TA = 100°C)

ICBO

−

−100

−10

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

hFE

215

500

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

VCE(sat)

−

−0.3

Vdc

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

VBE(on)

−0.6

−0.75

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(IE = 0, VCB = −10 Vdc, f = 1.0 MHz)

Cobo

−

7.0

pF

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

TYPICAL NOISE CHARACTERISTICS

(VCE = −5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0

10

20

50

100

200

500

1.0k

2.0k

5.0k

10k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

RS ≈ 0

IC = 10 mA

100

mA

30

mA

BANDWIDTH = 1.0 Hz

RS ≈∞

IC = 1.0 mA

300

mA

100

mA

30

mA

10

mA

10

20

50

100

200

500

1.0k 2.0k

5.0k

10k

2.0

1.0 mA

0.2

300

mA

类似零件编号 - BCW30LT1

制造商	部件名	数据表	功能描述
Motorola, Inc	BCW30LT1	451Kb / 8P	General Purpose Transistors
ON Semiconductor	BCW30LT1	345Kb / 8P	General Purpose Transistors(PNP Silicon) November, 1999 ??Rev. 0
Leshan Radio Company	BCW30LT1	290Kb / 6P	General Purpose Transistors(PNP Silicon)
ON Semiconductor	BCW30LT1G	255Kb / 7P	General Purpose Transistors November, 2016 ??Rev. 4
ON Semiconductor	BCW30LT1G	255Kb / 7P	General Purpose Transistors November, 2016 ??Rev. 4

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