BC847BPDXV6T5 datasheet(5/8 Pages) ONSEMI

部件名	BC847BPDXV6T5

功能描述	Dual General Purpose Transistor

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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BC847BPDXV6T1, BC847BPDXV6T5

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5

TYPICAL PNP CHARACTERISTICS

Figure 7. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 8. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

0

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02

−1.0

−10

0

−20

−0.1

−0.4

−0.8

1.5

1.0

0.7

0.5

0.3

−0.2

−10

−100

−1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE = −10 V

TA = 25°C

−55°C to +125°C

IC = −100 mA

IC = −20 mA

−0.5 −1.0 −2.0

−5.0 −10

−20

−50 −100 −200

−0.1 −0.2

−0.5 −1.0 −2.0

−5.0

−10 −20

−50 −100

IC = −200 mA

IC = −50 mA

IC =

−10 mA

Figure 11. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

−0.4

1.0

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

−0.5

TA = 25°C

Cob

Cib

−0.6

−1.0

−2.0

−4.0 −6.0

−10

−20 −30 −40

150

−1.0

−2.0 −3.0

−5.0

−10

−20 −30

−50

VCE = −10 V

TA = 25°C

1.0

类似零件编号 - BC847BPDXV6T5

制造商	部件名	数据表	功能描述
ON Semiconductor	BC847BPDXV6T5	95Kb / 8P	Dual General Purpose Transistor March, 2003 - Rev. 0
ON Semiconductor	BC847BPDXV6T5G	116Kb / 6P	NPN/PNP Dual General Purpose Transistor May, 2013 ??Rev. 2

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