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BYG24D 数据表(PDF) 1 Page - EIC discrete Semiconductors |
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BYG24D 数据表(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BYG24D - BYG24J FAST AVALANCHE RECTIFIERS PRV : 200 - 600 Volts Io : 1.5 Amperes FEATURES : * Glass passivated junction * Low profile package * Ideal for automated placement * Low reverse current * Soft recovery characteristics * Fast reverse recovery time * Pb / RoHS Free MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise noted . SYMBOL BYG24D BYG24G BYG24J UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 V Minimum Breakdown Voltage at IR = 100 μAV(BR) 200 400 600 V Maximum Average Forward Current IF(AV) 1.5 A Peak Forward Surge Current 10 ms single half sine wave superimposed on rated load Maximum Instantaneous at IF = 1 A, Tj = 25 °C 1.15 Forward Voltage (1) at IF = 1.5 A, Tj = 25 °C 1.25 Maximum DC Reverse Current at VR = VRRM, Tj = 25 °C IR 1.0 at VR = VRRM, Tj = 100 °C IR(H) 10 Maximum Reverse Recovery Time( IF = 0.5A, IR = 1.0A, Irr = 0.25A) Trr ns Typical Thermal Resistance, Junction to Case RӨJC 25 °C/W Maximum Thermal Resistance, Junction to Ambient (2) RӨJA 150 °C/W Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1A, Tj = 25 °C Operating Junction and Storage Temperature Range TJ, TSTG - 55 to + 150 °C Notes : (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Mounted on epoxy-glass hard tissue 35 µm * 17 mm² cooper area per electrode. Page 1 of 2 Rev. 01 : September 18, 2008 VF V RATING A IFSM 30 ER 20 mJ μA 140 2.3 ± 0.2 SMA 1.6 ± 0.25 2.6 ± 0.15 Dimensions in millimeters 1.3 ± 0.2 1.6 ± 0.25 IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
类似零件编号 - BYG24D |
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类似说明 - BYG24D |
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